| Del Nej | Fabrikant | Anvendelse |
|---|
| H7712-13 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| H8249-002 | Hamamatsu | Input voltage 11.5-15.5V; max input current50mA; side-on PMT photosensor module |
| F2813-32 | Hamamatsu | Rectangular MCP and assembly series. For detection and imaging of electron, ions, VUV lights, X-rays and V-rays mass spectroscopy, energy spectroscopy and high-speed response CRTs |
| E1168-18 | Hamamatsu | Max voltage2.3kV; diameter 6.15mm; housing, power and singal cables, connector adapter |
| R7400U-03 | Hamamatsu | Spectral responce185-650nm; between anode and cathode1250Vdc; 0.01mA; metal package photomultiplier tube |
| C7884G | Hamamatsu | Supply voltage +-12/+-15V; driver circuit for NMOS linear image sensor |
| L8446-62 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| C2955 | Hamamatsu | NO. of pixels380,000; infrared IC internal inspection system |
| R877 | Hamamatsu | Spectral responce300-650nm; between anode and cathode1500Vdc; 0.1mA; photomultiplier tube |
| PLP10-041C | Hamamatsu | High-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm |
| P2750-06 | Hamamatsu | 0.2mW; allowable current3mA; MCT photoconductive detector non-cooled type and TE-cooled suitable for long, continuous operation |
| C4710-01 | Hamamatsu | InputV +12V; 120mA; high voltage power supply unit |
| F2813-32M | Hamamatsu | Rectangular MCP and assembly series. For detection and imaging of electron, ions, VUV lights, X-rays and V-rays mass spectroscopy, energy spectroscopy and high-speed response CRTs |
| C7180 | Hamamatsu | CCD multichannel detector head. Designed for front-illuminated CCD area image sensor |
| H8567-05 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| H8568-03 | Hamamatsu | Input voltage 11.5-15.5V; max input current7-25mA; compact side-on PMT photosensor module |
| C5460-01 | Hamamatsu | Frequency bandwidth to 100K Hz; APD module integrated with peripheral circuit |
| L8446-61 | Hamamatsu | 0.6-2.2W; 2V; CW laser diode high optical power from a single chip |
| L4342 | Hamamatsu | 150W; metal halide lamp short-arc type |
| R649 | Hamamatsu | Spectral responce300-850nm; between anode and cathode1500Vdc; 0.01mA; photomultiplier tube |
| H8249-012 | Hamamatsu | Input voltage 11.5-15.5V; max input current50mA; side-on PMT photosensor module |
| G9208-256W | Hamamatsu | Number of pixels256; supply voltage5.0V; clock pulse voltage 5.5V; InGaAs linear near infrared (0.9 to 1.67um / 2.55um) image sensor |
| H7360-03 | Hamamatsu | Input voltage 4.75-5.25V; max input current140mA; photosensor module in metal package PMT |
| G1118 | Hamamatsu | Active area size1.3x1.3mm; reverse voltage5V; GaAsP photodiode - diffusion type. For visible light detection. For analytical instruments and color identification |
| H6780-06 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
| F2224-34M | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
| L2482 | Hamamatsu | 7.5A; 20V; high precision lamp housing E7536 for 150W xenon lamps and mercury-xenon lamps |
| C4880-80-22A | Hamamatsu | 12-bit idigital CCD camera. For faint light observation under a microscope, continuous imaging of high-speed moving objects, kinetic changes in light intensity |
| G8376-01 | Hamamatsu | Reverse voltage20V; spectral response range0.9-1.7um; InGaAs PIN photodiode standard type. For NIR (near infrared) photometry, optical communication |
| G8797-11 | Hamamatsu | Supply voltage0.5-6V; InGaAs PIN photodiode with preamp pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
