Sti:okDatasheet > Semiconductor blad > IR Datasheet > IR-160

IRFR320 SD233R30S50MC SD203N16S15PV IRGBC30U ST780C04L0 ST2100C30R2 SD153R08S15MSV SD150N04MBC SD153N12S15MV JANTXV2N6788 300UR160YPD IRFR220N ST2600C22R1 300UFR120APD 82RIA40M 309U120P2 SD150R16PSC SD103R10S10MSC SD103R10S20PSC SD150N04MSC IRFBC30AS IRG4PSH71KD SD103R08S10PSC S

IR Datablade Catalog-160

Del NejFabrikantAnvendelse
SD600N20PC IRStandard recovery diode
PVU414S-T IRHEXFET power MOSFET photovoltaic relay
IRFR320 IRHEXFET power MOSFET. VDSS = 400V, RDS(on) = 1.8 Ohm, ID = 3.1A
SD233R30S50MC IRFast recovery diode
SD203N16S15PV IRFast recovery diode
IRGBC30U IRInsulated gate bipolar transistor
ST780C04L0 IRPhase control thyristor
ST2100C30R2 IRPhase control thyristor
SD153R08S15MSV IRFast recovery diode
SD150N04MBC IRStandard recovery diode
SD153N12S15MV IRFast recovery diode
JANTXV2N6788 IRHEXFET power mosfet
300UR160YPD IRStandard recovery diode
IRFR220N IRHEXFET power MOSFET. VDSS = 200V, RDS(on) = 600mOhm, ID = 5.0A
ST2600C22R1 IRPhase control thyristor
300UFR120APD IRStandard recovery diode
82RIA40M IRPhase control thyristor
309U120P2 IRStandard recovery diode
SD150R16PSC IRStandard recovery diode
SD103R10S10MSC IRFast recovery diode
SD103R10S20PSC IRFast recovery diode
SD150N04MSC IRStandard recovery diode
IRFBC30AS IRHEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRG4PSH71KD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.97V @ VGE = 15V, IC = 42A
SD103R08S10PSC IRFast recovery diode
ST1200C12K0 IRPhase control thyristor
IRFPC60LC IRHEXFET power mosfet
IRF9610S IRHEXFET power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ohm, ID = -1.8A
72UF160YPD IRStandard recovery diode
SD203R14S20MC IRFast recovery diode

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