Sti:okDatasheet > Semiconductor blad > IR Datasheet > IR-24
ST330C12L3 47L160D IRFBC40L 72UFR160AYPD SD203R08S15MSC IRFP32N50K ST300C16C1L SD600N32PSC SD203R10S15MC SD253N08S20PSV SD203R25S20MC IRG4RC10S 305U120 IRFM260 ST2100C36R0L 305URA160P4 SD553C30S50L ST203S12MFJ2 ST300C16L0 SD600R16MTC IRFR9214 IRGPC50F IRF7460 ST330C16C3L 301UR12
Del Nej | Fabrikant | Anvendelse |
---|---|---|
IRF830A | IR | HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
ST280S04P0VL | IR | Phase control thyristor |
ST330C12L3 | IR | Phase control thyristor |
47L160D | IR | Standard recovery diode |
IRFBC40L | IR | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2 Ohm, ID = 6.2A |
72UFR160AYPD | IR | Standard recovery diode |
SD203R08S15MSC | IR | Fast recovery diode |
IRFP32N50K | IR | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.135 Ohm, ID = 32 A |
ST300C16C1L | IR | Phase control thyristor |
SD600N32PSC | IR | Standard recovery diode |
SD203R10S15MC | IR | Fast recovery diode |
SD253N08S20PSV | IR | Fast recovery diode |
SD203R25S20MC | IR | Fast recovery diode |
IRG4RC10S | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.10V @ VGE = 15V, IC = 2.0A |
305U120 | IR | Standard recovery diode |
IRFM260 | IR | HEXFET transistor |
ST2100C36R0L | IR | Phase control thyristor |
305URA160P4 | IR | Standard recovery diode |
SD553C30S50L | IR | Fast recovery diode |
ST203S12MFJ2 | IR | Inverter grade thyristor |
ST300C16L0 | IR | Phase control thyristor |
SD600R16MTC | IR | Standard recovery diode |
IRFR9214 | IR | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 3.0 Ohm, ID = -2.7A |
IRGPC50F | IR | Insulated gate bipolar transistor |
IRF7460 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 10 mOhm @ VGS = 10V, ID = 12A |
ST330C16C3L | IR | Phase control thyristor |
301UR120P4 | IR | Standard recovery diode |
ST330C12L1L | IR | Phase control thyristor |
305UA80P3 | IR | Standard recovery diode |
IRLZ44N | IR | Power MOSFET for fast switching applications, 55V, 47A |