Sti:okDatasheet > Semiconductor blad > IR Datasheet > IR-51
ST330C14C2L 303U80P3 SD203R14S20PSC IRFR9220 IRF5N3415 IRFDC20 IRG4BC20SD-S ST083S08PFK2L SD150N20PBC 307UA160 SD203R04S20MSC SD253N16S20MSV SD253R12S20PSV IRFP22N50A 302UR120YPD ST333C04CHK0 IRFBF20S ST110S08P2L ST303S08PFN0L 130HF120MSV IRFR9024TRL ST230S14P1 110RKI40 ST333C08L
Del Nej | Fabrikant | Anvendelse |
---|---|---|
ST330C08C0 | IR | Phase control thyristor |
309UR250 | IR | Standard recovery diode |
ST330C14C2L | IR | Phase control thyristor |
303U80P3 | IR | Standard recovery diode |
SD203R14S20PSC | IR | Fast recovery diode |
IRFR9220 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A |
IRF5N3415 | IR | HEXFET power MOSFET surface mount. BVDSS = 150V, RDS(on) = 0.042 Ohm, ID = 37.5A |
IRFDC20 | IR | HEXFET power MOSFET |
IRG4BC20SD-S | IR | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.4V @ VGE = 15V, IC = 10A |
ST083S08PFK2L | IR | Inverter grade thyristor |
SD150N20PBC | IR | Standard recovery diode |
307UA160 | IR | Standard recovery diode |
SD203R04S20MSC | IR | Fast recovery diode |
SD253N16S20MSV | IR | Fast recovery diode |
SD253R12S20PSV | IR | Fast recovery diode |
IRFP22N50A | IR | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 22A. |
302UR120YPD | IR | Standard recovery diode |
ST333C04CHK0 | IR | Inverter grade thyristor |
IRFBF20S | IR | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 8.0 Ohm, ID = 1.7A |
ST110S08P2L | IR | Phase control thyristor |
ST303S08PFN0L | IR | Inverter grade thyristor |
130HF120MSV | IR | Standard recovery diode |
IRFR9024TRL | IR | Power MOSFET, 60V, 8.8A |
ST230S14P1 | IR | Phase control thyristor |
110RKI40 | IR | Phase control thyristor |
ST333C08LHK0 | IR | Inverter grade thyristor |
IRHN8130 | IR | HEXFET transistor |
SD30OC08C | IR | Standard recovery diode |
300HFR80MS | IR | Standard recovery diode |
SD203R04S10MSC | IR | Fast recovery diode |