Sti:okDatasheet > Semiconductor blad > JGD Datasheet > JGD-13

55-B18 1N5530C 1N966A P6KE7.5 1N4122 P6KE18CA BY399 3EZ110D3 P4KE20CA SMBJ5953D SMAJ58CA P4KE15C SMAJ26 1N5937C P6KE68 1N5521B SMBJ5932D SMBJ5917A 1N4131 P6KE130CA ZMM55-B2V4 1N5922C ZMM5241C 1N5544 SMAJ18C ZMM5245A SMAJ100CA 1N967D

JGD Datablade Catalog-13

Del NejFabrikantAnvendelse
BAV74 JGDSurface mount switching diode. Max forward voltage 1.00V at 100mA.
ZMM55-D3V6 JGDSurface mount zener diode, 500mW. Nominal zener voltage 3.4-3.8 V. Test current 5 mA. +-20% tolerance.
ZMM55-B18 JGDSurface mount zener diode, 500mW. Nominal zener voltage 16.8-19.1 V. Test current 5 mA. +-2% tolerance.
1N5530C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 10.0 V. Test current 1.0 mAdc. +-2% tolerance.
1N966A JGD0.5W, silicon zener diode. Zener voltage 16V. Test current 7.8mA. +-10% tolerance.
P6KE7.5 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 7.5 V.
1N4122 JGD500mW low noise silicon zener diode. Nominal zener voltage 36V.
P6KE18CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V. Bidirectional.
BY399 JGD3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 800V.
3EZ110D3 JGD3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-3% tolerance.
P4KE20CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. Bidirectional.
SMBJ5953D JGD1.5W silicon surface mount zener diode. Zener voltage 150 V. Test current 2.5 mA. +-1% tolerance.
SMAJ58CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. Bidirectional.
P4KE15C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 15 V. Bidirectional.
SMAJ26 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V.
1N5937C JGD1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-2% tolerance.
P6KE68 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V.
1N5521B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance.
SMBJ5932D JGD1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-1% tolerance.
SMBJ5917A JGD1.5W silicon surface mount zener diode. Zener voltage 4.7 V. Test current 79.8 mA. +-10% tolerance.
1N4131 JGD500mW low noise silicon zener diode. Nominal zener voltage 75V.
P6KE130CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V. Bidirectional.
ZMM55-B2V4 JGDSurface mount zener diode, 500mW. Nominal zener voltage 2.28-2.56 V. Test current 5 mA. +-2% tolerance.
1N5922C JGD1.5 W, silicon zener diode. Zener voltage 7.5V. Test current 50 mA. +-2% tolerance.
ZMM5241C JGDSurface mount zener diode. Nominal zener voltage 11 V. Test current 20 mA. +-10% tolerance.
1N5544 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-20% tolerance.
SMAJ18C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V. Bidirectional.
ZMM5245A JGDSurface mount zener diode. Nominal zener voltage 15 V. Test current 8.5 mA. +-3% tolerance.
SMAJ100CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. Bidirectional.
1N967D JGD0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-1% tolerance.

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