Sti:okDatasheet > Semiconductor blad > Leshan Radio Datasheet > Leshan Radio-11

8.5 HVC363A MMBTA64LT1 DF02 MMUN2241LT1 05W4C 1.5KE20A MMUN2214RLT1 1N4735A 1N4004G MUN5136D1WT1 RB150 RS604 1N5227D 1F6 SMAJ36 SMAJ150 M04 MM3Z7V5T1 MC74VHC1GT00DFT1 BAL99LT1 1A3 S25VB80 BA891 MMUN2111RLT1 MMBTA14LT1 BBD330DWT1 SB360

Leshan Radio Datablade Catalog-11

Del NejFabrikantAnvendelse
1N4748A Leshan Radio22 V, zener diode
BC857BLT1 Leshan Radio45 V, general purpose transistor
SA8.5 Leshan Radio8.5 V, 1 mA, 500 W, transient voltage suppressor
HVC363A Leshan Radio35 V, variable capacitance diode
MMBTA64LT1 Leshan Radio30 V, darlington transistor
DF02 Leshan Radio200 V, 1 A, bridge rectifier
MMUN2241LT1 Leshan Radio50 V, bias resistor transistor
05W4C Leshan Radio500 mW, 5 mA, zener diode
1.5KE20A Leshan Radio20 V, 1 mA, 1500 W, transient voltage suppressor
MMUN2214RLT1 Leshan Radio50 V, bias resistor transistor
1N4735A Leshan Radio6.2 V, zener diode
1N4004G Leshan Radio400 V, 1 A, general purpose GPP diode
MUN5136D1WT1 Leshan Radio50 V, dual bias resistor transistor
RB150 Leshan Radio50 V, 1.5 A, bridge rectifier
RS604 Leshan Radio400 V, 6 A, bridge rectifier
1N5227D Leshan Radio3.6 V, 20 mA, zener diode
1F6 Leshan Radio800 V, 1 A, fast recovery diode
SMAJ36 Leshan Radio36 V, 1 mA, transient voltage suppressor
SMAJ150 Leshan Radio150 V, 1 mA, transient voltage suppressor
M04 Leshan Radio400 V, 1 A, glass passivated SMA diode
MM3Z7V5T1 Leshan Radio7.5 V, 5 mA, 200 mW, zener voltage regulator
MC74VHC1GT00DFT1 Leshan Radio2-input NAND gate
BAL99LT1 Leshan Radio70 V, 100 mA, switching diode
1A3 Leshan Radio200 V, 1 A general diode
S25VB80 Leshan Radio800 V, 25 A, bridge rectifier
BA891 Leshan Radio35 V, band-switching diode
MMUN2111RLT1 Leshan Radio50 V, bias resistor transistor
MMBTA14LT1 Leshan Radio30 V, darlington amplifier transistor
BBD330DWT1 Leshan Radio30 V, dual schottky barrier diode
SB360 Leshan Radio60 V, 3 A, schottky barrier diode

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