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L406 P6KE9.1 SD1020T 3.0SMCJ9.0CA SD520YS 3EZ140 P4SMAJ30CA P6SMBJ20C P4KE150 1.5SMCJ110CA 2EZ51 BAL99W P6SMBJ110C 3.0SMCJ200A 3KP110 BZX84C13W P4KE13A 1SMB5940 GBU4B UF1600FCT P4SMAJ8.0 P4SMAJ210 BZT52-C3V9S SD1030CT 3KP5.0A GL3500 PG608R SA75A

PanJit Datablade Catalog-17

Del NejFabrikantAnvendelse
1.5SMCJ40CA PanJitSurface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 40V; Vbr(min/max) = 44.4/51.1V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 64.5V, @ Ipp = 23.2A
SD860T PanJitSchottky barrier rectifier. Max recurrent peak reverse voltage 60 V. Max average forward rectified current at Tc = 75degC 8.0 A.
FL406 PanJitIn-line miniature single phase silicon bridge. Max recurrent peak reverse voltage 600V. Max average rectified output current 4.0 A.
P6KE9.1 PanJitGlass passivated junction transient voltage suppressor. 600 Watt peak power. 5.0 Watt steady state. Vrwm = 7.37V, Vbr(min/max) = 8.19/10.00V, It = 1 mA.
SD1020T PanJitSchottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 10.0 A.
3.0SMCJ9.0CA PanJitSurface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 9.0 V. Vbr(max/min) = 10.0/11.5 V @ It = 1.0 mA. Ir = 10 uA @ Vrwm. Vc = 15.4 V @ Ipp = 194.8 A.
SD520YS PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 5 A.
3EZ140 PanJitGlass passivated junction silicon zener. Power 3.0 Watts. Vz = 140 V. Izt = 5.3 mA.
P4SMAJ30CA PanJitSurfase mount transient voltage suppressor. Reverse stand-off voltage 30 V. Breakdown voltage(min/max) 33.3/38.3 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 48.4 V. Peak pulse current 8.3 A.
P6SMBJ20C PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 20 V. Vbr(min/max) = 22.2/28.1 V. It = 1.0 mA. Ir = 5 uA. Vc = 35.8 V. Ipp = 16.7 A.
P4KE150 PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 121.00V, Vbr(min/max) = 135.00/165.00V, It = 1 mA.
1.5SMCJ110CA PanJitSurface mount transient voltage suppressor. 1500W peak power pulse. Vrmv = 110V; Vbr(min/max) = 122/140.5V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 177V, @ Ipp = 8.4A
2EZ51 PanJitGlass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 51.0 V. Test current Izt = 9.8 mA.
BAL99W PanJitSurface mount switching diode. Power 200 mW. Reverse voltage 75 V. Rectified current 150 mA.
P6SMBJ110C PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V. It = 1.0 mA. Ir = 5 uA. Vc = 196 V. Ipp = 3.0 A.
3.0SMCJ200A PanJitSurface mount transient voltage suppressor. 3000 W peak power pulse. Vrwm = 200 V. Vbr(min/max) = 220/256.0.0V @ It. Ir = 5 uA @ Vrwm. Vc = 324 V @ Ipp = 9.3 A.
3KP110 PanJitGlass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 110.00 V. Vbr = 122.00 V (min), 154.50 V (max). It = 1 mA.
BZX84C13W PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 13 V
P4KE13A PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 11.10V, Vbr(min/max) = 12.40/13.70V, It = 1mA.
1SMB5940 PanJitSurface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 43 V. Test current Izt = 8.7 mA
GBU4B PanJitGlass passivated single-phase bridge rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified output current at Tc=100degC 4.0 A, at Ta=40degC 3.0 A.
UF1600FCT PanJitIsolation ultrafast switching rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current at Tc = 100degC 16.0 A.
P4SMAJ8.0 PanJitSurfase mount transient voltage suppressor. Reverse stand-off voltage 8.0 V. Breakdown voltage(min/max) 8.89/11.30 V. Test current 1.0 mA. Reverse leakage 50 uA. Max clamp voltage 15.0 V. Peak pulse current 26.5 A.
P4SMAJ210 PanJitSurfase mount transient voltage suppressor. 400W. Reverse stand-off voltage 210 V. Breakdown voltage(min/max) 231/296.1 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 376 V. Peak pulse current 1.1 A.
BZT52-C3V9S PanJitSurface mount silicon zener diode. Power 200 mWatts. Nominal zener voltage 3.9 V
SD1030CT PanJitSchottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 10.0 A.
3KP5.0A PanJitGlass passivated junction transient voltage suppressor. 3000 W peak pulse power. Vrwm = 5.0 V. Vbr = 6.40 V (min), 7.25 V (max). It = 10 mA.
GL3500 PanJitIn-line high current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 35 A.
PG608R PanJitGlass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 800 A. Max average forward rectified current at Ta = 60degC 6.0 A.
SA75A PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 75.00V, Vbr(min/max) = 83.30/95.80V, It = 1 mA.

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