F1001 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001 lignende

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1001 Datasheet og Spec

Fabrikant : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Størrelse : 40 KB

Anvendelse : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor