F1060 spec: 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 lignende

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Datasheet og Spec

Fabrikant : Polyfet RF

Packing :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Størrelse : 41 KB

Anvendelse : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor