P121 spec: 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 lignende

P121
- 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Datasheet og Spec

Fabrikant : Polyfet RF

Packing : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Størrelse : 35 KB

Anvendelse : 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor