Sti:OKDatasheet > Semiconductor blad > WingShing Datasheet > WMBTA92
WMBTA92 spec: NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
WMBTA92 lignende
- WMBT3904
- NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
- WMBT3904
- NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
- WMBT3906
- PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
- WMBT3906
- PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
- WMBT5401LT1
- PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
- WMBT5551LT1
- NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
- WMBTA42
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
- WMBTA92
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
WMBTA92 Datasheet og Spec
Fabrikant : WingShing
Packing : SOT-23
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Størrelse : 78 KB
Anvendelse : NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
WMBTA92 PDF Download