Sti:OKDatasheet > Semiconductor blad > Ceramate Datasheet > 50S116T-5
50S116T-5 spec: High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
50S116T-5 lignende
- 50S116T-5
- High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
- 50S116T-6
- High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
- 50S116T-7
- High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
50S116T-5 Datasheet og Spec
Fabrikant : Ceramate
Packing : TSOP
Pins : 50
Temperature : Min 0 °C | Max 70 °C
Størrelse : 1126 KB
Anvendelse : High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
50S116T-5 PDF Download