Sti:OKDatasheet > Semiconductor blad > IR Datasheet > IRF3710L
IRF3710L spec: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
IRF3710L lignende
- IRF3205
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205L
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF3205S
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
- IRF3315
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
- IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3710L Datasheet og Spec
Fabrikant : IR
Packing : TO-262
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Størrelse : 202 KB
Anvendelse : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
IRF3710L PDF Download