IRF7700 spec: HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.015 Ohm, ID = -8.6A @ VGS = -4.5V. RDS(on) = 0.024 Ohm, ID = -7.3A @ VGS = -2.5V.

IRF7700 lignende

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7700 Datasheet og Spec

Fabrikant : IR

Packing : TSSOP

Pins : 8

Temperature : Min -55 °C | Max 150 °C

Størrelse : 170 KB

Anvendelse : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.015 Ohm, ID = -8.6A @ VGS = -4.5V. RDS(on) = 0.024 Ohm, ID = -7.3A @ VGS = -2.5V.