IRF7752 spec: HEXFET power MOSFET. VDSS = 30V. RDS(on) = 0.030 Ohm ID = 4.6A @ VGS = 10V. RDS(on) = 0.036Ohm, ID = 3.9A @ VGS = 4.5V.

IRF7752 lignende

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7752 Datasheet og Spec

Fabrikant : IR

Packing : TSSOP

Pins : 8

Temperature : Min -55 °C | Max 150 °C

Størrelse : 128 KB

Anvendelse : HEXFET power MOSFET. VDSS = 30V. RDS(on) = 0.030 Ohm ID = 4.6A @ VGS = 10V. RDS(on) = 0.036Ohm, ID = 3.9A @ VGS = 4.5V.