Sti:OKDatasheet > Semiconductor blad > IR Datasheet > IRFB260N
IRFB260N spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
Sti:OKDatasheet > Semiconductor blad > IR Datasheet > IRFB260N
IRFB260N spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
Fabrikant : IR
Packing :
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Størrelse : 98 KB
Anvendelse : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A