Sti:OKDatasheet > Semiconductor blad > IR Datasheet > IRFIBE30G
IRFIBE30G spec: HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A
Sti:OKDatasheet > Semiconductor blad > IR Datasheet > IRFIBE30G
IRFIBE30G spec: HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A
Fabrikant : IR
Packing : TO-220 FULLPAK
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Størrelse : 156 KB
Anvendelse : HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A