| Del Nej | Fabrikant | Anvendelse |
|---|
| SA18A | MDE Semiconductor | 18.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| LCE6.5A | MDE Semiconductor | 6.50V; 10mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| 5KP6.5 | MDE Semiconductor | 6.50V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| 1.5KE43 | MDE Semiconductor | 34.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SAC26 | MDE Semiconductor | 26.00V; 11.1A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| MAX20-7.0C | MDE Semiconductor | 7.00V; 50mA ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMBJ54A | MDE Semiconductor | 54.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-40D102K | MDE Semiconductor | 1000V; max peak current40000A; metal oxide varistor. High energy series 40mm single disc |
| MDE-25S681K | MDE Semiconductor | 680V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| 15KW85 | MDE Semiconductor | 85.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P6KE56A | MDE Semiconductor | 47.80V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP6.0A | MDE Semiconductor | 6.00V; 50mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| P4KE7.5 | MDE Semiconductor | 6.05V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP28A | MDE Semiconductor | 28.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| P4KE150 | MDE Semiconductor | 121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 5KP9.0A | MDE Semiconductor | 9.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SA14 | MDE Semiconductor | 14.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-25S221K | MDE Semiconductor | 220V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc |
| P4KE16A | MDE Semiconductor | 12.90V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SA33 | MDE Semiconductor | 33.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-32D301K | MDE Semiconductor | 300V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| MDE-10D911K | MDE Semiconductor | 910V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| SMBJ18A | MDE Semiconductor | 18.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1.5KE24A | MDE Semiconductor | 20.40V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMAJ26A | MDE Semiconductor | 26.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KP130A | MDE Semiconductor | 130V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 15KP45A | MDE Semiconductor | 45.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| MPTE-45C | MDE Semiconductor | 45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMDJ15A | MDE Semiconductor | 15.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 20KW52 | MDE Semiconductor | 52.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
