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4A MDE-7D681M SMAJ40 MAX40-30.0CA 15KP18 3KP26A SMBJ10 SMDJ45A MDE-32D431K SMCJ40 1N6387 MDE-14D821K 20KW160 SMCJ8.5 SMBJ64A MDE-20D431K 30KW168A SMAJ11 LCE15 MDE-7D560M 1.5KE120 5KP36A SMBJ17A MAX20-110.0C SMCJ64 SMBJ16A 5KP160A 30KW60

MDE Semiconductor Datablade Catalog-47

Del NejFabrikantAnvendelse
3KP9.0 MDE Semiconductor9.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
15KW22A MDE Semiconductor22.0V; 10mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMAJ24A MDE Semiconductor24.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-7D681M MDE Semiconductor680V; max peak current1750A; metal oxide varistor. Standard D series 7mm disc
SMAJ40 MDE Semiconductor40.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX40-30.0CA MDE Semiconductor30.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
15KP18 MDE Semiconductor18.0V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
3KP26A MDE Semiconductor26.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMBJ10 MDE Semiconductor10.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMDJ45A MDE Semiconductor45.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-32D431K MDE Semiconductor430V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc
SMCJ40 MDE Semiconductor40.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
1N6387 MDE Semiconductor22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor
MDE-14D821K MDE Semiconductor820V; max peak current5000A; metal oxide varistor. Standard D series 14mm disc
20KW160 MDE Semiconductor160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMCJ8.5 MDE Semiconductor8.50V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ64A MDE Semiconductor64.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-20D431K MDE Semiconductor430V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc
30KW168A MDE Semiconductor168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMAJ11 MDE Semiconductor11.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
LCE15 MDE Semiconductor15.00V; 1mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications
MDE-7D560M MDE Semiconductor56V; max peak current500A; metal oxide varistor. Standard D series 7mm disc
1.5KE120 MDE Semiconductor97.20V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
5KP36A MDE Semiconductor36.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
SMBJ17A MDE Semiconductor17.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX20-110.0C MDE Semiconductor110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
SMCJ64 MDE Semiconductor64.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ16A MDE Semiconductor16.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
5KP160A MDE Semiconductor160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
30KW60 MDE Semiconductor60.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications

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