Sti:OKDatasheet > Semiconductor blad > MDE Semiconductor Datasheet > P4KE6.8A
P4KE6.8A spec: 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE6.8A lignende
- P4KE75
- 60.70V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE440
- 356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE12A
- 10.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE180
- 146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE220
- 175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE200
- 162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE39
- 31.60V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
- P4KE12
- 9.72V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE6.8A Datasheet og Spec
Fabrikant : MDE Semiconductor
Packing :
Pins : 2
Temperature : Min -55 °C | Max 175 °C
Størrelse : 928 KB
Anvendelse : 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
P4KE6.8A PDF Download