Sti:OKDatasheet > Semiconductor blad > Micro Electronics Datasheet > BD241B
BD241B spec: 4mW NPN silicon epitaxial base power transistor
Sti:OKDatasheet > Semiconductor blad > Micro Electronics Datasheet > BD241B
BD241B spec: 4mW NPN silicon epitaxial base power transistor
Fabrikant : Micro Electronics
Packing : TO-220B
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Størrelse : 106 KB
Anvendelse : 4mW NPN silicon epitaxial base power transistor