Sti:OKDatasheet > Semiconductor blad > Micron Datasheet > MT58V512V36DF-10
MT58V512V36DF-10 spec: 2.5V, 512K x 36 pipelined, DCD syncburst SRAM, 10ns
MT58V512V36DF-10 lignende
- MT58L1MY18DF-6
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns
- MT58L1MY18DF-7.5
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns
- MT58L1MY18DT-10
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns
- MT58L1MY18DT-10
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 10ns
- MT58L1MY18DT-6
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 6ns
- MT58L1MY18DT-7.5
- 3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns
- MT58L512Y32DF-10
- "3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 10ns"
- MT58L512Y32DF-7.5
- 3.3V, 512K x 32 pipelined, DCD syncburst SRAM, 7.5ns
MT58V512V36DF-10 Datasheet og Spec
Fabrikant : Micron
Packing : FBGA
Pins : 165
Temperature : Min 0 °C | Max 70 °C
Størrelse : 578 KB
Anvendelse : 2.5V, 512K x 36 pipelined, DCD syncburst SRAM, 10ns
MT58V512V36DF-10 PDF Download