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MTB30N06VL spec: TMOS V power field effect transistor
MTB30N06VL lignende
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB30N06VL Datasheet og Spec
Fabrikant : Motorola
Packing : DPAK
Pins : 4
Temperature : Min -55 °C | Max 175 °C
Størrelse : 288 KB
Anvendelse : TMOS V power field effect transistor
MTB30N06VL PDF Download