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VTE1113 spec: GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1113 lignende
- VTE1063
- GaAlAs infrared emitting diode. Irradiance(typ) 5.0 mW/cm2 at distance 36 mm, diameter 6.4 mm.
- VTE1113
- GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.
- VTE1163
- GaAlAs infrared emitting diode. Irradiance(typ) 28 mW/cm2 at distance 36 mm, diameter 6.4 mm.
- VTE1261
- GaAlAs infrared emitting diode. Irradiance(typ) 3.9 mW/cm2 (distance 36 mm, diameter 6.4 mm).
- VTE1262
- GaAlAs infrared emitting diode. Irradiance(typ) 5.2 mW/cm2 (distance 36 mm, diameter 6.4 mm).
- VTE1281-1
- GaAlAs infrared emitting diode. Irradiance(typ) 3.3 mW/cm2 (distance 36 mm, diameter 6.4 mm).
- VTE1281-2
- GaAlAs infrared emitting diode. Irradiance(typ) 6.5 mW/cm2 (distance 36 mm, diameter 6.4 mm).
- VTE1281F
- GaAlAs infrared emitting diode. Irradiance(typ) 0.21 mW/cm2 (distance 36 mm, diameter 6.4 mm).
VTE1113 Datasheet og Spec
Fabrikant : PerkinElmer
Packing : TO-46
Pins : 2
Temperature : Min -55 °C | Max 125 °C
Størrelse : 27 KB
Anvendelse : GaAs infrared emitting diode. Irradiance(typ) 15 mW/cm2 at distance 36 mm, diameter 6.4 mm.
VTE1113 PDF Download