Sti:OKDatasheet > Semiconductor blad > Philips Datasheet > PHW10N60E
PHW10N60E spec: 600 V, power MOS transistor avalanche energy rated
Sti:OKDatasheet > Semiconductor blad > Philips Datasheet > PHW10N60E
PHW10N60E spec: 600 V, power MOS transistor avalanche energy rated
Fabrikant : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Størrelse : 126 KB
Anvendelse : 600 V, power MOS transistor avalanche energy rated