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PHX8ND50E lignende

  • PHX8N50E
    • 500 V, power MOS transistor avalanche energy rated
  • PHX8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX8N50E
    • PowerMOS transistor. Avalanche energy rated.
  • PHX8ND50E
    • PowerMOS transistor. FREDFET, avalanche energy rated.

PHX8ND50E Datasheet og Spec

Fabrikant : Philips 

Packing : SOT186A 

Pins : 3 

Temperature : Min -55 °C | Max 150 °C

Størrelse : 82 KB

Anvendelse : PowerMOS transistor. FREDFET, avalanche energy rated. 

PHX8ND50E PDF Download