F1027 spec: 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 lignende

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 Datasheet og Spec

Fabrikant : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Størrelse : 43 KB

Anvendelse : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor