F1208 spec: 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1208 lignende

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1208 Datasheet og Spec

Fabrikant : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Størrelse : 41 KB

Anvendelse : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor