F1210 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 lignende

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 Datasheet og Spec

Fabrikant : Polyfet RF

Packing :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Størrelse : 40 KB

Anvendelse : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor