F1410 spec: 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 lignende

F1410
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1415
- 150 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1410 Datasheet og Spec

Fabrikant : Polyfet RF

Packing :

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Størrelse : 39 KB

Anvendelse : 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor