F2202 spec: 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2202 lignende

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2202 Datasheet og Spec

Fabrikant : Polyfet RF

Packing :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Størrelse : 40 KB

Anvendelse : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor