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F2213 lignende

  • F2211
    • 15 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2212
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2213
    • 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2213 Datasheet og Spec

Fabrikant : Polyfet RF 

Packing :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Størrelse : 39 KB

Anvendelse : 16 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2213 PDF Download