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F2248 lignende

  • F2246
    • 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2247
    • 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2248
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2248 Datasheet og Spec

Fabrikant : Polyfet RF 

Packing :  

Pins : 6 

Temperature : Min -65 °C | Max 150 °C

Størrelse : 38 KB

Anvendelse : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2248 PDF Download