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L8701P spec: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P lignende
- L8701P
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P Datasheet og Spec
Fabrikant : Polyfet RF
Packing : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Størrelse : 46 KB
Anvendelse : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P PDF Download