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L8711P spec: 7 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8711P lignende
- L8711P
- 7 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8711P Datasheet og Spec
Fabrikant : Polyfet RF
Packing : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Størrelse : 43 KB
Anvendelse : 7 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8711P PDF Download