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LP821 spec: 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 lignende
- LP821
- 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 Datasheet og Spec
Fabrikant : Polyfet RF
Packing :
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Størrelse : 38 KB
Anvendelse : 10 Watt, silicon gate enhancement mode RF power LDMOS transistor
LP821 PDF Download