P281 spec: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 lignende

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Datasheet og Spec

Fabrikant : Polyfet RF

Packing : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Størrelse : 41 KB

Anvendelse : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor