Sti:OKDatasheet > Semiconductor blad > Polyfet RF Datasheet > SM401
SM401 spec: 135 Watt, silicon gate enhancement mode RF power VDMOS transistor
Sti:OKDatasheet > Semiconductor blad > Polyfet RF Datasheet > SM401
SM401 spec: 135 Watt, silicon gate enhancement mode RF power VDMOS transistor
Fabrikant : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Størrelse : 40 KB
Anvendelse : 135 Watt, silicon gate enhancement mode RF power VDMOS transistor