Sti:OKDatasheet > Semiconductor blad > Usha Datasheet > 2N3055
2N3055 spec: High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
2N3055 lignende
- 2N3055
- High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
- 2N3055
- NPN silicon power transistor. 15Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications.
- 2N3055H
- NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications.
2N3055 Datasheet og Spec
Fabrikant : Usha
Packing : TO-3
Pins : 3
Temperature : Min -65 °C | Max 200 °C
Størrelse : 52 KB
Anvendelse : High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W.
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