Sti:okDatasheet > Semiconductor blad > IR Datasheet > IR-39

RFB61N15D 307UR120P3 SD703C20S30L IRF7705 ST280CH04C1 ST183S04PFN1 IRF640L IRFU9110 IRFL9014 ST2600C28R2L 301UA160P3 IRL2203N SD300R08PC IR51HD224 300HFR120M SD300N16PBV 300HF120MS ST180S12P2V SD103N10S15MBC IRSF3031L SD103N10S10PBC ST180S04P0 JANTXV2N6762 ST333S04PFM1 IRHNA7460S

IR Datablade Catalog-39

Del NejFabrikantAnvendelse
IR2131S IR3 high side and 3 low side driver
IRG4PC30FD IRInsulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 600V, VCE(on)typ. = 1.59V @ VGE = 15V, IC = 17A
IRFB61N15D IRHEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.032 Ohm, ID = 60A
307UR120P3 IRStandard recovery diode
SD703C20S30L IRFast recovery diode
IRF7705 IRHEXFET power MOSFET. VDSS = -30V, RDS(on) = 18mOhm, ID = -8.0A @ VGS = -10V. RDS(on) = 30mOhm, ID = -6.0A @ VGS = -4.5V.
ST280CH04C1 IRPhase control thyristor
ST183S04PFN1 IRInverter grade thyristor
IRF640L IRN-channel power MOSFET for fast switching applications, 200V, 18A
IRFU9110 IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -3.1A
IRFL9014 IRHEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -1.8A
ST2600C28R2L IRPhase control thyristor
301UA160P3 IRStandard recovery diode
IRL2203N IRPower MOSFET, 30V, 116A
SD300R08PC IRStandard recovery diode
IR51HD224 IRSelf-oscillating half-bridge
300HFR120M IRStandard recovery diode
SD300N16PBV IRStandard recovery diode
300HF120MS IRStandard recovery diode
ST180S12P2V IRPhase control thyristor
SD103N10S15MBC IRFast recovery diode
IRSF3031L IRFully protected power mosfet switch
SD103N10S10PBC IRFast recovery diode
ST180S04P0 IRPhase control thyristor
JANTXV2N6762 IRHEXFET power mosfet
ST333S04PFM1 IRInverter grade thyristor
IRHNA7460SE IRHEXFET transistor
307U200P4 IRStandard recovery diode
303UR120P3 IRStandard recovery diode
ST230C04C0 IRPhase control thyristor

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